TPC6D03 2002-08-23 1 toshiba multi-chip device silicon pnp epitaxial type, schottky barrier diode TPC6D03 high-speed switching applications dc-dc converter applications a pnp transistor and a schottky barrier diode are mounted on a compact and slim package. maximum ratings transistor (ta 25c) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-collector voltage v eco 9.5 v emitter-base voltage v ebo 9.5 v dc i c 1.2 a collector current pulse i cp 2.0 a base current i b 120 ma collector power dissipation (q1 single-device operation) p c (note 1) 400 mw junction temperature t j 150 c diode (ta 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 30 v average forward current i f (av) 0.7 a peak one cycle surge forward current (sine wave) i fsm 7.0 a power dissipation (d1 single-device operation) p d (note 1) 320 mw junction temperature t j 125 c maximum ratings for transistor and diode (ta 25c) characteristics symbol rating unit total power dissipation (simultaneous operation) p t (note 2) 600 mw storage temperature range t stg 55~150 c thermal resistance characteristics (for transistor and diode) characteristics symbol max unit thermal resistance, junction to ambient (single-device operation) r th (j-a) (note 1) 312 c/w note 1: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) note 2: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) total power dissipation value when two devices are operated at the same time unit: mm jedec D jeita D toshiba 2-3t1f weight: 0.011 g (typ.) marking h 8 c circuit configuration 6 1 2 3 5 4 q1 d1
TPC6D03 2002-08-23 2 electrical characteristics (ta 25c) transistor characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb 20 v, i e 0 100 na emitter cut-off current i ebo v eb 9.5 v, i c 0 100 na collector-emitter breakdown voltage v (br) ceo i c 10 ma, i b 0 20 v h fe (1) v ce 2 v, i c 0.15 a 140 350 dc current gain h fe (2) v ce 2 v, i c 0.5 a 85 collector-emitter saturation voltage v ce (sat) i c 0.5 a, i b 16.7 ma 0.17 v base-emitter saturation voltage v be (sat) i c 0.5 a, i b 16.7 ma 1.10 v rise time t r 40 storage time t stg 135 switching time fall time t f see figure 1 circuit diagram. v cc 12 v, r l 24 i b1 i b2 16.7 ma 37 ns diode characteristics symbol test condition min typ. max unit peak forward voltage v fm (1) i f 0.5 a 0.35 0.4 v peak forward voltage v fm (2) i f 0.7 a 0.38 0.43 v repetitive peak reverse voltage v rrm i r 3 ma 30 40 v repetitive peak reverse current i rrm v r 10 v 25 100 a junction capacitance c j v r 10 v, f 1 mhz 19 pf handling precaution schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. this current leakage and not proper operating temperature or voltage may cause thermal run. please take forward and reverse loss into consideration when you design. figure 1 switching time test circuit & timing chart i b2 i b1 20 s output input i b2 i b1 r l v cc duty cycle 1%
TPC6D03 2002-08-23 3 transistor collector current i c (a) base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter voltage v be (v) i c ? v be collector-emitter voltage v ce (v) safe operating area collector current i c (a) 1000 0.001 100 10 1 0.01 0.1 1 10 common emitter v ce 2 v single nonrepetitive pulse ta 100c 55 25 0.001 1 0.1 0.01 0.001 0.01 0.1 1 10 25 55 ta 100c common emitter i c /i b 30 single nonrepetitive pulse 0.001 0.01 1 10 10 0.1 1 common emitter i c /i b 30 single nonrepetitive pulse ta 100c 25 55 0.1 0 i b 2 ma 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.4 0.8 1.2 1.6 4 6 8 10 15 20 30 common emitter ta 25c single nonrepetitive pulse 25 55 ta 100c 0 0 0.3 0.6 0.9 1.2 1.5 0.3 0.6 0.9 1.2 1.5 common emitter v ce 2 v single nonrepetitive pulse dc operation (ta 25c) v ceo max 100 ms * 10 s * i c max (continuous) 10 0.01 0.1 1 10 100 0.1 1 i c max (pulsed) * 100 s * 1 ms * 10 ms * note that the curves for 100 ms, 10 s and dc operation will be different when the devices aren?t mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ). these characteristic curves must be derated linearly with increase in temperature. * : single nonrepetitive pulse ta 25c q1 single-device operation. when the device is mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 )
TPC6D03 2002-08-23 4 diode junction capacitance c j (pf) instantaneous forward voltage v f (v) i f ? v f instantaneous forward current i f (a) average forward current i f (av) (a) p f (av) ? i f (av) average forward power dissipation p f (av) (w) average forward current i f (av) (a) ta m ax ? i f (av) maximum allowable temperature ta max (c) reverse voltage v r (v) c j ? v r (typical) 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 ta 25c 125 1 1 10 100 10 100 f 1 mhz ta 25c 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 140 120 180 dc 360 0 rectangular waveform conduction angle i f (av) v r 15 v 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.2 0.3 0.4 0.5 30 60 90 120 180 dc 360 0 rectangular waveform conduction angle
TPC6D03 2002-08-23 5 diode number of cycles surge forward current (non-repetitive) surge forward current i fsm (a) junction temperature t j (c) i r ? t j (typical) reverse current i r (ma) reverse voltage v r (v) p r (av) ? v r (typical) average reverse power dissipation p r (av) (w) f 50 hz ta 25c 8 6 4 2 0 10 1 100 0.01 0 50 100 150 0.1 1 100 10 pulse measurement (one cell) v r 3 v 5 10 15 20 30 0 0 10 20 30 0.2 0.4 0.6 0.8 1.0 1.2 60 120 180 240 300 dc 360 0 rectangular waveform conduction angle t j 125c v r
TPC6D03 2002-08-23 6 transistor and diode pulse width t w (s) r th (j-a) ? t w transient thermal resistance r th (j-a) (c/w) permissible power dissipation for d1 p d (w) permissible power dissipation for simultaneous operation permissible power dissipation for q1 p c (w) 1 0.001 0.01 0.1 1 10 100 1000 10 100 1000 curves should be applied in thermal limited area. single nonrepetitive pulse ta 25c mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) either at q1 or d1 single-operation 0 0 0.1 0.2 0.3 0.4 0.5 0.1 0.2 0.3 0.4 0.5 dc operation ta 25c mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) (0.25, 0.35)
TPC6D03 2002-08-23 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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